Elastic and inelastic strain in submicron-thick ZnO epilayers grown on r-sapphire substrates by metal–organic vapour phase deposition

Martinez-Tomas, M.C.; Klymov, O.; Shimazoe, K.; Sánchez-Royo, J.-F.; Changarath, M. E.; Agouram, S.; Muñoz-Sanjosé, V.

doi:10.1107/S2052520624000441

Acta Crystallographica Section B
Acta Crystallographica
Section B STRUCTURAL SCIENCE, CRYSTAL ENGINEERING AND MATERIALS

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Figure 2
(a) Thickness of ZnO thin films as a function of growth time. (b) 2θ–ω scan of the 39 nm-thick ZnO film. Pole figures for (c) $[\{ 0006\}]$ reflections of sapphire and (d) $[\{ 10{\bar 1}0\}]$ reflections of the 39 nm-thick ZnO film.

STRUCTURAL SCIENCE
CRYSTAL ENGINEERING
MATERIALS

ISSN: 2052-5206

Volume 80| Part 2| April 2024| Pages 72-83

https://doi.org/10.1107/S2052520624000441

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